Title: GaN Device Engineer

Location: San Jose CA, El Segundo CA, Leominster MA, Chandler AZ, Dallas TX

Contract: Fulltime

Job Description:

TCAD simulation tool and device design experience and GaN + Silicon Development required. (Need to have more than just research level to effectively take it to production)
Leads the development of Radiation Hardened and Radiation Tolerant GaN power switches
Actively contributes in roadmaps and future technology brainstorming discussions
Defines device design and fabrication platform specifics to meet the application targets in a manufacturable and cost effective manner
Performs device and process simulations, photo mask design and testing
Supports the platform/product design review process
Coaches junior staff in the team in device design and fabrication process
Utilize knowledge of prior art, by writing up a description of the new invention and working with the IP team to file a disclosure

5-10 years of experience in leading GaN technology development
Well-versed in HEMT device physics and fabrication of GaN power switches
Proficient in Synopsys TCAD and Cadence suite of software along with electrical testing of GaN power switches, DOE definition and analysis using JMP. Experience in Radiation Hardened preferred
MS or PhD in Electrical Engineering preferred or in Materials Science with focus on GaN
Must have ability to work & communicate effectively with cross-functional team members located across the globe
You must be data driven and use quantitative analysis skills to understand complex situations and collaboratively drive towards creative solutions even if they are not yours.